Factory Lead Time  

12 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

56 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Power Dissipation (Max)  

375W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

72A Tc

Published  

2008

Series  

HEXFET®

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

22MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

375W

Case Connection  

DRAIN

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

22m Ω @ 44A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5380pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

150nC @ 10V

Rise Time  

18ns

Vgs (Max)  

±20V

Fall Time (Typ)  

22 ns

Continuous Drain Current (ID)  

72A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

200V

Avalanche Energy Rating (Eas)  

250 mJ

Width  

9.652mm

Length  

10.668mm

Height  

4.826mm

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free